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FDW2501NZ
July 2008
FDW2501NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Features
* 5.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5V RDS(ON) = 25 m @ VGS = 2.5V
* Extended VGSS range (12V) for battery applications * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* Load switch * Motor drive * DC/DC conversion * Power management
1 2 3 4
8 7 6 5
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W C
5.5 30 1.0 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
100 125
C/W
Package Marking and Ordering Information
Device Marking 2501NZ
2008 Fairchild Semiconductor Corporation
Device FDW2501NZ
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDW2501NZ Rev E2 (W)
FDW2501NZ
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14 1 10 -10 mV/C A A A
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 5.5 A ID = 5 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.5 A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.5 A
0.6
1.0 -3 14 19 19
1.5
V mV/C
18 25 29
m
ID(on) gFS
30 30
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
1286 305 161
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
10 14 25 8
20 25 40 16 17
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 5.5 A,
12 2.6 3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.0 A Voltage
(Note 2)
0.7
1.0 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) b) RJA is 100C/W (steady state) when mounted on a 1 inch copper pad on FR-4. RJA is 125C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDW2501NZ Rev E2 (W)
FDW2501NZ
Typical Characteristics
60
VGS = 4.5V
50 ID, DRAIN CURRENT (A)
3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V
1.8
1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 1 4.5V
40
2.5V
30 20
2.0V
10
0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.5A VGS = 4.5V 1.4
ID = 2.8A
0.04
1.2
0.03
1
TA = 125oC
0.8
0.02
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
0.01
125
150
175
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
ID, DRAIN CURRENT (A) 30
TA = -55oC 125oC
25oC
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC
20
25oC
-55oC
10
0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2501NZ Rev E2 (W)
FDW2501NZ
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V)
2000 ID = 5.5 A VDS = 5V 10V 15V CAPACITANCE (pF) 1600 CISS 1200 f = 1 MHz VGS = 0 V
4
3
2
800
1
400
COSS CRSS
0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 125 C/W TA = 25 C 0.01 0.1 1 10
o o
100s 1ms 100ms 1s
40
SINGLE PULSE RJA = 125C/W TA = 25C
30
20
10
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.
RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW2501NZ Rev E2 (W)
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35

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